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Dicing Before Grinding (DBG) Process

In recent years, the demand for smaller and thinner devices and packages for use in ultra-compact stacks and arrays has continued to increase. At the same time, larger-diameter wafers are being adopted to increase productivity. The Dicing Before Grinding process fulfills all these needs, producing extremely high-quality finished die. In the conventional dicing after grinding process, 200- or 300-milimeter wafers are covered with protective tape on the pattern side and then back-ground to a thickness of 200 micrometers or less. After the protective tape is removed, the wafer is transferred to a taped frame and diced to effect die singulation.

DBG reverses this process. First the wafer is grooved (partial cut with a dicing saw), and protective tape is applied to the pattern side. Then the wafer is ground to a thin specification; singulation occurs during grinding when the grinder grinds below the level of the grooves formed by the dicer. Finally, the wafer is transferred to a frame, and the protective tape is removed. The DBG process makes it unnecessary to handle large, thin wafers, since die singulation occurs during grinding.

【DBG Process】	【Conventional Process】

Partial Cut Dicing The dicer applies a groove of precise depth to the wafer.	Lamination Protective tape is applied to the pattern side.


Lamination Protective tape is applied to the pattern side.	Grinding The grinder thins the wafer.


Grinding The grinder thins the wafer, effecting die singulation.	Peeling The protective tape is removed.


Mounting Pick-up tape (as opposed to standard dicing tape) is applied.	Mounting Dicing tape is applied to the wafer.


Peeling The wafer is turned over and the protective tape is removed.	Full-Cut Dicing The dicing saw dices the wafer, effecting die singulation.


Return The wafer is returned to the cassette.	Return The wafer is returned to the cassette.

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